15gn03fa no. a1107-1/8 applications ? vhf, rf, mixer, osc, if ampli er features ? high cutoff frequency : f t =1.5ghz typ ? high gain : ? s21e ? 2 =14db typ (f=0.4ghz) ? ultrasmall package permitting applied sets to be small and slim ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 3v collector current i c 70 ma collector dissipation p c 250 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7029a-002 ordering number : ena1107a 71112 tkim/d0308ab msim tc-00001673 15gn03fa npn epitaxial planar silicon transistor vhf high-frequency ampli er applications http:// semicon.sanyo.com/en/network product & package information ? package : ssfp ? jeita, jedec : sc-81 ? minimum packing quantity : 8,000 pcs./reel packing type: tl marking electrical connection sanyo semiconductors data sheet tl zc lot no. lot no. 3 2 1 1 : base 2 : emitter 3 : collector sanyo : ssfp 1 3 12 2 3 1.4 1.4 0.3 0.3 0.8 0.6 0.07 0.07 0 to 0.02 0.25 0.2 0.45 0.1 15gn03fa-tl-h
15gn03fa no. a1107-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =10v, i e =0a 0.1 a emitter cutoff current i ebo v eb =2v, i c =0a 1 a dc current gain h fe v ce =5v, i c =10ma 100 180 gain-bandwidth product f t v ce =5v, i c =20ma 1.0 1.5 ghz output capacitance cob v cb =10v, f=1mhz 0.9 1.2 pf reverse transfer capacitance cre 0.6 pf forward transfer gain ? s21e ? 2 v ce =5v, i c =20ma, f=0.4ghz 11 14 db noise figure nf v ce =3v, i c =2ma, f=0.4ghz 1.6 db ordering information device package shipping memo 15gn03fa-tl-h ssfp 8,000pcs./reel pb free and halogen free 0246810 0 10 20 30 40 50 60 70 80 90 100 collector-to-emitter voltage, v ce -- v collector current, i c -- m a i c -- v ce it08114 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 80 70 60 base-to-emitter voltage, v be -- v collector current, i c -- m a it08115 i c -- v be 5 7 100 2 3 7 1.0 2 3 5 h fe -- i c 1.0 23 57 10 23 57 100 1.0 23 57 10 23 57 100 collector current, i c -- ma dc current gain, h fe it08116 i b =0 f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- ghz it08117 v ce =5v i b =0ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma v ce =5v v ce =5v
15gn03fa no. a1107-3/8 0 20 40 60 80 100 120 140 160 it08122 collector dissipation, p c -- mw p c -- ta 4 6 8 10 12 14 16 1.0 23 57 23 57 10 100 ? s21e ? 2 -- i c collector current, i c -- ma ambient temperature, ta -- c forward transfer gain, ? s21e ? 2 -- db it08120 1.0 10 357 2357 235 2 3 5 7 10 1.0 collector current, i c -- ma noise figure, nf -- db it08121 nf -- i c 5 7 2 3 1.0 5 7 2 3 1.0 collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf it08119 cre -- v cb 0.1 23 5 5 723 5 23 7 1.0 10 23 5 5 723 5 23 7 1.0 10 0.1 cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf it08118 v ce =5v f=400mhz v ce =3v f=400mhz z s =50 z s =zsopt 0 f=1mhz 0 250 300 200 150 100 50 f=1mhz
15gn03fa no. a1107-4/8 s parameters (common emitter) v ce =5v, i c =1ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.961 -34.18 3.294 157.68 0.040 70.32 0.974 -8.70 200 0.932 -63.71 2.882 139.23 0.068 53.42 0.920 -15.14 300 0.907 -86.85 2.472 124.36 0.087 40.84 0.873 -19.79 400 0.887 -104.47 2.112 112.52 0.096 32.90 0.842 -23.48 500 0.871 -117.78 1.834 102.94 0.099 28.12 0.818 -26.33 600 0.859 -128.62 1.605 94.86 0.101 23.64 0.802 -29.35 700 0.857 -137.14 1.432 87.95 0.097 19.29 0.798 -32.27 800 0.850 -144.21 1.289 81.60 0.095 17.58 0.796 -35.02 900 0.845 -150.72 1.176 76.29 0.090 17.23 0.797 -38.01 1000 0.839 -156.10 1.081 70.99 0.085 16.55 0.797 -41.02 v ce =5v, i c =3ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.892 -58.77 8.161 145.03 0.034 56.36 0.902 -14.46 200 0.843 -98.07 6.099 122.67 0.051 42.43 0.786 -20.13 300 0.817 -121.82 4.658 108.72 0.055 33.87 0.727 -22.56 400 0.803 -136.85 3.715 98.70 0.058 30.68 0.700 -24.99 500 0.792 -146.48 3.051 91.64 0.058 28.74 0.687 -26.83 600 0.786 -154.00 2.599 85.58 0.058 29.60 0.678 -29.37 700 0.788 -159.54 2.257 80.45 0.056 31.43 0.677 -32.02 800 0.787 -164.23 2.001 75.47 0.055 35.06 0.680 -34.73 900 0.784 -168.41 1.798 71.27 0.054 40.40 0.683 -37.51 1000 0.782 -171.95 1.635 67.12 0.056 43.46 0.687 -40.32 v ce =5v, i c =5ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.836 -76.63 11.501 136.45 0.030 52.40 0.838 -17.51 200 0.798 -117.27 7.726 114.17 0.040 37.48 0.709 -21.18 300 0.781 -137.77 5.593 101.72 0.043 34.01 0.658 -22.46 400 0.773 -149.33 4.358 93.38 0.044 33.11 0.638 -24.37 500 0.769 -156.90 3.532 87.35 0.046 36.56 0.630 -26.09 600 0.766 -162.43 2.982 81.95 0.045 39.81 0.625 -28.60 700 0.769 -167.07 2.577 77.34 0.045 42.61 0.624 -31.24 800 0.770 -170.74 2.274 72.95 0.048 47.50 0.632 -33.83 900 0.768 -173.91 2.041 69.14 0.049 53.32 0.637 -36.62 1000 0.765 -176.92 1.844 65.26 0.054 58.93 0.643 -39.47 v ce =5v, i c =10ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.767 -103.15 15.822 124.63 0.023 46.33 0.734 -20.47 200 0.755 -138.50 9.411 104.65 0.028 38.32 0.619 -20.77 300 0.754 -153.35 6.527 94.69 0.030 38.73 0.584 -21.03 400 0.752 -161.57 4.982 87.97 0.033 42.64 0.572 -22.78 500 0.750 -166.80 4.014 82.84 0.035 48.31 0.572 -24.69 600 0.748 -170.55 3.373 78.22 0.037 54.47 0.569 -27.25 700 0.753 -173.80 2.897 73.96 0.041 59.86 0.572 -29.68 800 0.756 -176.67 2.549 69.82 0.044 62.98 0.581 -32.50 900 0.757 -179.14 2.277 66.41 0.049 68.43 0.588 -35.36 1000 0.755 178.64 2.056 62.61 0.053 72.29 0.593 -38.13
15gn03fa no. a1107-5/8 s parameters (common emitter) v ce =5v, i c =15ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.738 -117.62 17.843 118.37 0.020 37.24 0.676 -21.03 200 0.743 -147.93 10.060 100.54 0.023 37.86 0.576 -19.90 300 0.747 -159.66 6.883 91.63 0.025 46.10 0.554 -19.99 400 0.745 -166.45 5.220 85.36 0.029 50.71 0.546 -21.67 500 0.744 -170.73 4.196 80.63 0.032 56.16 0.545 -23.38 600 0.745 -173.77 3.511 76.05 0.037 61.92 0.546 -26.19 700 0.752 -176.53 3.020 72.07 0.040 66.25 0.552 -28.81 800 0.756 -179.03 2.658 68.01 0.044 70.92 0.560 -31.80 900 0.755 178.79 2.361 64.63 0.049 74.88 0.565 -34.57 1000 0.756 176.76 2.132 60.89 0.053 76.28 0.574 -37.19 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.726 -126.53 18.861 114.70 0.017 40.89 0.640 -21.11 200 0.739 -153.13 10.358 98.19 0.022 42.84 0.553 -18.93 300 0.745 -163.18 7.042 89.82 0.024 49.20 0.536 -19.14 400 0.745 -169.08 5.324 83.86 0.027 55.62 0.530 -20.71 500 0.745 -172.83 4.271 79.22 0.031 60.79 0.533 -22.65 600 0.746 -175.56 3.573 74.72 0.035 67.12 0.534 -25.56 700 0.753 -177.99 3.062 70.86 0.039 71.29 0.539 -28.07 800 0.756 179.89 2.695 66.61 0.043 73.72 0.550 -30.95 900 0.757 177.73 2.394 63.36 0.050 76.38 0.557 -33.79 1000 0.758 175.84 2.152 59.54 0.055 80.04 0.565 -36.64 v ce =5v, i c =30ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.717 -137.48 19.630 110.26 0.015 44.21 0.601 -20.34 200 0.738 -159.18 10.491 95.35 0.018 47.49 0.531 -17.41 300 0.746 -167.18 7.088 87.53 0.021 53.11 0.517 -17.66 400 0.748 -172.07 5.346 81.72 0.026 61.37 0.517 -19.37 500 0.748 -175.06 4.275 77.20 0.030 66.16 0.521 -21.62 600 0.752 -177.32 3.568 72.74 0.034 71.42 0.527 -24.47 700 0.760 -179.44 3.054 68.73 0.039 73.32 0.532 -26.91 800 0.764 178.51 2.662 64.73 0.044 78.79 0.543 -29.78 900 0.766 176.85 2.365 61.05 0.049 79.65 0.553 -32.93 1000 0.766 174.89 2.129 57.53 0.055 81.62 0.562 -35.85 v ce =5v, i c =50ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.726 -148.90 18.826 105.46 0.013 44.77 0.567 -18.27 200 0.751 -165.14 9.843 92.00 0.017 52.99 0.521 -15.19 300 0.762 -171.12 6.595 84.51 0.020 59.41 0.513 -16.09 400 0.764 -174.96 4.946 78.62 0.024 66.61 0.516 -18.39 500 0.767 -177.43 3.935 74.00 0.029 73.69 0.522 -20.54 600 0.772 -179.26 3.268 69.60 0.033 75.14 0.529 -23.65 700 0.780 178.77 2.784 65.39 0.038 78.53 0.537 -26.50 800 0.786 176.95 2.430 60.89 0.043 80.73 0.548 -29.67 900 0.789 175.17 2.150 57.73 0.050 83.79 0.559 -32.92 1000 0.791 173.32 1.926 53.98 0.054 84.92 0.569 -35.99
15gn03fa no. a1107-6/8 embossed taping speci cation 15gn03fa-tl-h
15gn03fa no. a1107-7/8 outline drawing land pattern example 15gn03fa-tl-h mass (g) unit 0.0018 * for reference mm unit: mm 0.5 0.5 0.45 0.45 0.45 0.45 1.2
15gn03fa no. a1107-8/8 ps this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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